200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study
Current, M. I. ; Lopes, D. ; Foad, M. A. ; England, J. G. ; Jones, C. ; Su, D.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998-01, Vol.16 (1), p.327-333
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