0.1 mu m (Al sub(0.5)Ga sub(0.5)) sub(0.5)In sub(0.5)P/In sub(0.2)Ga sub(0.8)As/GaAs PHEMT grown by gas source molecular beam epitaxy

Zaknoune, M ; Schuler, O ; Mollot, F ; Theron, D ; Crosnier, Y

Electronics letters, 1999-01, Vol.35 (20), p.1776-1777 [Periódico revisado por pares]

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