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(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

Tengeler, Sven ; Kaiser, Bernhard ; Chaussende, Didier ; Jaegermann, Wolfram

Applied surface science, 2017-04, Vol.400, p.6-13 [Periódico revisado por pares]

Elsevier B.V

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  • Título:
    (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes
  • Autor: Tengeler, Sven ; Kaiser, Bernhard ; Chaussende, Didier ; Jaegermann, Wolfram
  • Assuntos: 3C-SiC ; Band diagram ; Barrier height ; Chemical Sciences ; Condensed Matter ; Engineering Sciences ; Interface experiment ; Material chemistry ; Nickel ; Physics ; XPS
  • É parte de: Applied surface science, 2017-04, Vol.400, p.6-13
  • Descrição: •Schottky behavior (ΦB=0.41eV) and Fermi level pining were found pre annealing.•Ni2Si formation was confirmed for 5min at 850°C.•3C/Ni2Si Fermi level alignment is responsible for ohmic contact behavior.•Wet chemical etching (Si–OH/C–H termination) does not impair Ni2Si formation. The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41eV. The subsequent annealing at 850°C for 5min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.
  • Editor: Elsevier B.V
  • Idioma: Inglês
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