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PHOTOEXCITATION OF LOCAL VIBRATIONS IN SEMICONDUCTORS

ABAKUMOV, VN ; PAKHOMOV, AA

JETP letters, 1992-07, Vol.56 (2), p.99-102 [Periódico revisado por pares]

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Título:
PHOTOEXCITATION OF LOCAL VIBRATIONS IN SEMICONDUCTORS
Autor: ABAKUMOV, VN ; PAKHOMOV, AA
Assuntos: Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Lattice dynamics ; Phonons and vibrations in crystal lattices ; Physical Sciences ; Physics ; Physics, Multidisciplinary ; Science & Technology
É parte de: JETP letters, 1992-07, Vol.56 (2), p.99-102
Descrição: A new mechanism for the excitation of local vibrations of defects with a deep level is discussed. If the density of free carriers is high, and if the photoexcitation of the defects is intense, the energy of the absorbed light may be transferred to local vibrations as the result of a radiationless multiphonon capture of carriers by photoionized defects.
Editor: WOODBURY: Amer Inst Physics
Idioma: Inglês

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