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An LO phase shifter with frequency tripling and phase detection in 28 nm FD-SOI CMOS for mm-wave 5G transceivers

Gannedahl, Rikard ; Sjöland, Henrik

Analog integrated circuits and signal processing, 2023, Vol.114 (1), p.1-11 [Periódico revisado por pares]

New York: Springer US

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Título:
An LO phase shifter with frequency tripling and phase detection in 28 nm FD-SOI CMOS for mm-wave 5G transceivers
Autor: Gannedahl, Rikard ; Sjöland, Henrik
Assuntos: Algorithms ; Annan elektroteknik och elektronik ; Beamforming ; Calibration ; Circuits ; Circuits and Systems ; CMOS ; Electrical Engineering ; Electrical Engineering, Electronic Engineering, Information Engineering ; Elektroteknik och elektronik ; Engineering ; Engineering and Technology ; Frequency locking ; Frequency multiplier ; Injection ; Injection locking ; Millimeter waves ; mmWave ; Oscillators ; Other Electrical Engineering, Electronic Engineering, Information Engineering ; Phase detectors ; Phase error ; Phase shifter ; Phase shifters ; Signal,Image and Speech Processing ; SOI (semiconductors) ; Teknik
É parte de: Analog integrated circuits and signal processing, 2023, Vol.114 (1), p.1-11
Descrição: This paper presents an LO phase shifter with frequency tripling for 28-GHz 5G transceivers. The phase shifting and frequency tripling are achieved using an injection-locked oscillator and injection-locked frequency tripler, respectively. A phase detector based on third harmonic mixing is also implemented and is used to detect the applied phase shift, supporting automatic calibration of the phase shifter. Additionally, an algorithm to automatically tune the oscillators to their respective locking frequency is presented. To test the phase shifter, a 24–30-GHz sliding-IF receiver is implemented. Simulations show that a > 360 ∘ tuning range over the full 24–30 GHz span is achieved, with a gain variation of 0.11 dB or less, and that the phase detector has an rms phase error of < 2.5 ∘ . The circuit is implemented in a 28nm FD-SOI CMOS process and the entire chip measures 1080 μ m × 1080 μ m , including pads, and consumes 27–29 mW from a 1 V supply.
Editor: New York: Springer US
Idioma: Inglês

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An LO phase shifter with frequency tripling and phase detection in 28 nm FD-SOI CMOS for mm-wave 5G transceivers

Gannedahl, Rikard ; Sjöland, Henrik

New York: Springer US

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