Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures

Rodrigues, S C P ; Sipahi, G M ; Scolfaro, L M R ; Leite, J R

Journal of physics. Condensed matter, 2002-06, Vol.14 (23), p.5813-5827, Article 312 [Periódico revisado por pares]

Bristol: IOP Publishing

Texto completo disponível