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Light soaking induced doping increase and sodium redistribution in Cu(In,Ga)Se2-based thin film solar cells

Chen, Si ; Jarmar, Tobias ; Södergren, Sven ; Malm, Ulf ; Wallin, Erik ; Lundberg, Olle ; Jander, Sebastian ; Hunger, Ralf ; Stolt, Lars

Thin solid films, 2015-05, Vol.582, p.35-38 [Periódico revisado por pares]

Elsevier B.V

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  • Título:
    Light soaking induced doping increase and sodium redistribution in Cu(In,Ga)Se2-based thin film solar cells
  • Autor: Chen, Si ; Jarmar, Tobias ; Södergren, Sven ; Malm, Ulf ; Wallin, Erik ; Lundberg, Olle ; Jander, Sebastian ; Hunger, Ralf ; Stolt, Lars
  • Assuntos: Apparent doping ; CIGS ; Deposition ; Doping ; Light soaking ; Minority carrier lifetime ; Photovoltaic cells ; Recombination ; Simulation ; Soaking ; Sodium ; Solar cells ; Thin films ; Thin-film solar cell
  • É parte de: Thin solid films, 2015-05, Vol.582, p.35-38
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: Light-induced metastabilities of Cu(In,Ga)Se2 (CIGS)-based thin film solar cells have been extensively researched for many years. It is commonly observed that junction capacitance and p-doping level in CIGS absorbers increase considerably after light soaking (LS). In this work, we focus on the LS behaviors of cells with different minority carrier lifetimes (τn). Experiments show that high efficiency cells with long τn lose open circuit voltage (Voc) and fill factor (FF) upon LS, whereas low efficiency cells with short τn lose less or even gain Voc and FF. The sodium content measured with glow discharge optical emission spectroscopy (GD-OES) increases in the region close to the CdS/CIGS interface with LS and may contribute to the observed LS behaviors. The change in electrical parameters is explained with simulations, which relate the Voc and FF changes to a reduced recombination rate in the space charge region due to the light-induced doping increase. The simulations also suggest that cells with higher n-doping in the CdS are less sensitive to changes in interface recombination rate and doping of CIGS, which agrees with the hypothesis that the CdS buffer deposition is important for the LS behavior. •Absorber doping increase after light soaking (LS) in Cu(In,Ga)Se2 (CIGS) cells.•More LS degradation for CIGS solar cell with longer minority carrier lifetime•Migration of Na ions from CIGS back towards CdS/CIGS interface during LS•Na migration during LS is detrimental to the stability of CIGS solar cells.
  • Editor: Elsevier B.V
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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