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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

Meier, F. ; Protte, M. ; Baron, E. ; Feneberg, M. ; Goldhahn, R. ; Reuter, D. ; As, D. J.

AIP advances, 2021-07, Vol.11 (7), p.075013-075013-6 [Periódico revisado por pares]

Melville: American Institute of Physics

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  • Título:
    Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
  • Autor: Meier, F. ; Protte, M. ; Baron, E. ; Feneberg, M. ; Goldhahn, R. ; Reuter, D. ; As, D. J.
  • Assuntos: Gallium nitrides ; Low temperature ; Molecular beam epitaxy ; Photoluminescence ; Silica ; Silicon carbide ; Silicon dioxide ; Silicon substrates
  • É parte de: AIP advances, 2021-07, Vol.11 (7), p.075013-075013-6
  • Descrição: Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 μm thick silicon (001) and 10 μm thick 3C-silicon carbide (001), grown on 500 μm silicon (001), were used as substrates and structured with silicon dioxide masks. Selective area growth on silicon and 3C-silicon carbide was tested for both thermal and plasma deposited oxides. Multiple growth series showed that gallium nitride coverage of silicon dioxide vanished at growth temperatures of 870 °C for silicon substrates and at a surface temperature of 930 °C for 3C-silicon carbide substrates. Whereas gallium nitride is grown in its hexagonal form on silicon substrates, phase pure cubic gallium nitride could selectively be grown on the 3C-silicon carbide template. The cubic phase is verified by high resolution x-ray diffraction and low temperature photoluminescence measurements. The photoluminescence measurements prove that gallium nitride condensed selectively on the 3C-silicon carbide surfaces uncovered by silicon dioxide.
  • Editor: Melville: American Institute of Physics
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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