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Boron nitride substrates for high mobility chemical vapor deposited graphene

Gannett, W. ; Regan, W. ; Watanabe, K. ; Taniguchi, T. ; Crommie, M. F. ; Zettl, A.

Applied physics letters, 2011-06, Vol.98 (24), p.242105-242105-3 [Periódico revisado por pares]

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Título:
Boron nitride substrates for high mobility chemical vapor deposited graphene
Autor: Gannett, W. ; Regan, W. ; Watanabe, K. ; Taniguchi, T. ; Crommie, M. F. ; Zettl, A.
É parte de: Applied physics letters, 2011-06, Vol.98 (24), p.242105-242105-3
Descrição: Chemical vapor deposited (CVD) graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cm 2 / V s , an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.
Editor: American Institute of Physics
Idioma: Inglês

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