Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers
Chow, Y. C. ; Lynsky, C. ; Wu, F. ; Nakamura, S. ; DenBaars, S. P. ; Weisbuch, C. ; Speck, J. S.
Applied physics letters, 2021-11, Vol.119 (22) [Periódico revisado por pares]Melville: American Institute of Physics
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