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Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers

Seo, Yuta ; Masubuchi, Satoru ; Watanabe, Eisuke ; Onodera, Momoko ; Moriya, Rai ; Watanabe, Kenji ; Taniguchi, Takashi ; Machida, Tomoki

Applied physics letters, 2020-12, Vol.117 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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Título:
Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers
Autor: Seo, Yuta ; Masubuchi, Satoru ; Watanabe, Eisuke ; Onodera, Momoko ; Moriya, Rai ; Watanabe, Kenji ; Taniguchi, Takashi ; Machida, Tomoki
Assuntos: Applied physics ; Bilayers ; Bombardment ; Boron nitride ; Contact pressure ; Contact resistance ; Cryogenic temperature ; Electron beam lithography ; Etching ; Graphene ; Low pressure ; Plasma etching ; Plasma pressure ; Plasmas (physics) ; Selectivity
É parte de: Applied physics letters, 2020-12, Vol.117 (24)
Descrição: We describe a technique for fabricating one-dimensional Ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite backgate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers

Seo, Yuta ; Masubuchi, Satoru ; Watanabe, Eisuke ; Onodera, Momoko ; Moriya, Rai ; Watanabe, Kenji ; Taniguchi, Takashi ; Machida, Tomoki

Melville: American Institute of Physics

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