Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Yamada, Takahiro ; Ito, Joyo ; Asahara, Ryohei ; Watanabe, Kenta ; Nozaki, Mikito ; Hosoi, Takuji ; Shimura, Takayoshi ; Watanabe, Heiji

Applied physics letters, 2017-06, Vol.110 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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