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Robust Coupling between Structural and Electronic Transitions in a Mott Material

Kalcheim, Yoav ; Butakov, Nikita ; Vargas, Nicolas M ; Lee, Min-Han ; Del Valle, Javier ; Trastoy, Juan ; Salev, Pavel ; Schuller, Jon ; Schuller, Ivan K

Physical review letters, 2019-02, Vol.122 (5), p.057601-057601, Article 057601 [Periódico revisado por pares]

United States: American Physical Society

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  • Título:
    Robust Coupling between Structural and Electronic Transitions in a Mott Material
  • Autor: Kalcheim, Yoav ; Butakov, Nikita ; Vargas, Nicolas M ; Lee, Min-Han ; Del Valle, Javier ; Trastoy, Juan ; Salev, Pavel ; Schuller, Jon ; Schuller, Ivan K
  • Assuntos: Coupling ; Electron transitions ; Infrared spectroscopy ; Insulators ; Metal-insulator transition ; Phase transitions ; Vanadium oxides ; X-ray diffraction
  • É parte de: Physical review letters, 2019-02, Vol.122 (5), p.057601-057601, Article 057601
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
    USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
    SC0019273
  • Descrição: The interdependences of different phase transitions in Mott materials are fundamental to the understanding of the mechanisms behind them. One of the most important relations is between the ubiquitous structural and electronic transitions. Using IR spectroscopy, optical reflectivity, and x-ray diffraction, we show that the metal-insulator transition is coupled to the structural phase transition in V_{2}O_{3} films. This coupling persists even in films with widely varying transition temperatures and strains. Our findings are in contrast to recent experimental findings and theoretical predictions. Using V_{2}O_{3} as a model system, we discuss the pitfalls in measurements of the electronic and structural states of Mott materials in general, calling for a critical examination of previous work in this field. Our findings also have important implications for the performance of Mott materials in next-generation neuromorphic computing technology.
  • Editor: United States: American Physical Society
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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