First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff -7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C

Chiu, Jih-Chao ; Sarkar, Eknath ; Liu, Yuan-Ming ; Chen, Yu-Ciao ; Fan, Yu-Cheng ; Liu, C. W.

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

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