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High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD

Haga, K. ; Suzuki, T. ; Kashiwaba, Y. ; Watanabe, H. ; Zhang, B.P. ; Segawa, Y.

Thin solid films, 2003-06, Vol.433 (1), p.131-134 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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Título:
High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD
Autor: Haga, K. ; Suzuki, T. ; Kashiwaba, Y. ; Watanabe, H. ; Zhang, B.P. ; Segawa, Y.
Assuntos: Buffer layer ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics ; Rectification ; Si substrate ; ZnO film
É parte de: Thin solid films, 2003-06, Vol.433 (1), p.131-134
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: High-quality ZnO films were successfully prepared on Si wafers by low-pressure MO-CVD using zinc acetylacetonate (Zn(C 5H 7O 2) 2) and oxygen. The c-axis oriented ZnO films were grown on p-type Si wafers at temperature of 520 °C with ZnO buffers layers deposited by RF sputtering. Although, the ZnO layer deposited by sputtering has a poor c-axis orientation, the films prepared by MO-CVD on the ZnO buffer layer shows a sharp X-ray diffraction peak at 34.4° corresponding to the (0002) of hexagonal ZnO. Room temperature photoluminescence spectrum of the all film exhibits a strong peak consisted of near-band edges emission at 378 nm. Current–voltage characteristics of the ZnO(n)/Si(p) heterojunction exhibits non-linear and rectifying characteristics with a small current leakage in the reverse direction. A dark-blue light was clearly observed around the periphery of the top Al electrode by applying forward bias voltages.
Editor: Lausanne: Elsevier B.V
Idioma: Inglês

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High-quality ZnO films prepared on Si wafers by low-pressure MO-CVD

Haga, K. ; Suzuki, T. ; Kashiwaba, Y. ; Watanabe, H. ; Zhang, B.P. ; Segawa, Y.

Lausanne: Elsevier B.V

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