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Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates

Chao-Kun Lin ; Sang-Wan Ryu ; Won-Jin Choi ; Dapkus, P.D.

IEEE photonics technology letters, 1999-08, Vol.11 (8), p.937-939

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Título:
Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates
Autor: Chao-Kun Lin ; Sang-Wan Ryu ; Won-Jin Choi ; Dapkus, P.D.
Assuntos: Absorbing ; Absorption ; Apertures ; Bonding ; Devices ; Etching ; Fabrication ; Gallium arsenide ; Optical surface waves ; Quantum efficiency ; Semiconductor lasers ; Substrates ; Surface emitting lasers ; Threshold currents ; Vertical cavity surface emission lasers ; Vertical cavity surface emitting lasers ; Wafer bonding
É parte de: IEEE photonics technology letters, 1999-08, Vol.11 (8), p.937-939
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
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Descrição: Bottom-emitting 850-nm vertical-cavity surface-emitting lasers were fabricated using wafer bonding technology to replace the absorbing GaAs substrates with transparent GaP substrates. Ohmic-like p-type GaAs-GaP bonded interfaces were obtained with proper bonding condition. The devices with 4×4 μm 2 current aperture exhibit 24% external quantum efficiency, and threshold current as low as 400 μA. The threshold voltages range from 1.71 to 1.8 V for different aperture size devices.
Editor: IEEE
Idioma: Inglês

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