A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance

Khodabakhsh, Amir ; Fallahnejad, Mohammad ; Vadizadeh, Mahdi

Microelectronics and reliability, 2024-01, Vol.152, p.115278, Article 115278 [Periódico revisado por pares]

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