0.25 mu m gate inverted HEMTs for an ultra-high speed DCFL dynamic frequency divider

Saito, T. ; Fujishiro, H.I. ; Ichioka, T. ; Tanaka, K. ; Nishi, S. ; Sano, Y.

11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989, p.117-120

IEEE

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