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Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets

Hu, Guojing ; Guo, Hui ; Lv, Senhao ; Li, Linxuan ; Wang, Yunhao ; Han, Yechao ; Pan, Lulu ; Xie, Yulan ; Yu, Weiqi ; Zhu, Ke ; Qi, Qi ; Xian, Guoyu ; Zhu, Shiyu ; Shi, Jinan ; Bao, Lihong ; Lin, Xiao ; Wu, Zhou ; Yang, Haitao ; Hong‐jun Gao

Advanced materials (Weinheim), 2024-07, Vol.36 (27), p.e2403154 [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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  • Título:
    Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets
  • Autor: Hu, Guojing ; Guo, Hui ; Lv, Senhao ; Li, Linxuan ; Wang, Yunhao ; Han, Yechao ; Pan, Lulu ; Xie, Yulan ; Yu, Weiqi ; Zhu, Ke ; Qi, Qi ; Xian, Guoyu ; Zhu, Shiyu ; Shi, Jinan ; Bao, Lihong ; Lin, Xiao ; Wu, Zhou ; Yang, Haitao ; Hong‐jun Gao
  • Assuntos: Broken symmetry ; Curie temperature ; Devices ; Effectiveness ; Ferromagnetic materials ; Low resistance ; Magnetic anisotropy ; Magnetoresistance ; Magnetoresistivity
  • É parte de: Advanced materials (Weinheim), 2024-07, Vol.36 (27), p.e2403154
  • Notas: ObjectType-Article-2
    SourceType-Scholarly Journals-1
    ObjectType-Feature-1
    content type line 23
  • Descrição: Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high‐quality room‐temperature ferromagnet, Fe3GaTe2 (c‐Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room‐temperature antisymmetric magnetoresistance (MR) is first observed in c‐Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room‐temperature thickness‐controlled antisymmetric MR and further design room‐temperature 2D spintronic devices based on the vdW ferromagnet c‐Fe3GaTe2.
  • Editor: Weinheim: Wiley Subscription Services, Inc
  • Idioma: Inglês;Holandês
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