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Comparative studies of photoluminescence from n and p δ doping wells in GaAs

Enderlein, R. ; Sipahi, G.M. ; Scolfaro, L.M.R. ; Leite, J.R. ; Diaz, I.F.L.

Materials science & engineering. B, Solid-state materials for advanced technology, 1995-12, Vol.35 (1), p.396-400 [Periódico revisado por pares]

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Título:
Comparative studies of photoluminescence from n and p δ doping wells in GaAs
Autor: Enderlein, R. ; Sipahi, G.M. ; Scolfaro, L.M.R. ; Leite, J.R. ; Diaz, I.F.L.
Assuntos: Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Gallium arsenide ; Iii-v semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics ; δ doping
É parte de: Materials science & engineering. B, Solid-state materials for advanced technology, 1995-12, Vol.35 (1), p.396-400
Descrição: Luminescence spectra for n and p δ doping wells in GaAs are calculated. The stationary electron and hole states of the wells are obtained self-consistently by means of the multiband effective mass theory. The overlap integrals of the electron and hole envelope functions are crucial for the luminescence intensities. Those for light holes are larger than those for heavy holes, and those for p δ doping wells exceed those for n δ doping wells by almost two orders of magnitude. This explains the experimental findings on luminescence from such wells.
Editor: Amsterdam: Elsevier B.V
Idioma: Inglês

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