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Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

Richard, M.-I. ; Malachias, A. ; Schülli, T. U. ; Favre-Nicolin, V. ; Zhong, Z. ; Metzger, T. H. ; Renaud, G.

Applied physics letters, 2015-01, Vol.106 (1) [Periódico revisado por pares]

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Título:
Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands
Autor: Richard, M.-I. ; Malachias, A. ; Schülli, T. U. ; Favre-Nicolin, V. ; Zhong, Z. ; Metzger, T. H. ; Renaud, G.
Assuntos: ANNEALING ; Applied physics ; BRAGG REFLECTION ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL GROWTH ; CRYSTAL STRUCTURE ; DIFFUSE SCATTERING ; DOMAIN STRUCTURE ; Domains ; Epitaxial growth ; EPITAXY ; Germanium ; GERMANIUM SILICIDES ; INDIUM FLUORIDES ; Lateral stability ; NANOPARTICLES ; PHASE STABILITY ; Physics ; SILICON ; SYMMETRY ; Thermal stability ; THIN FILMS ; X RADIATION ; X-RAY DIFFRACTION
É parte de: Applied physics letters, 2015-01, Vol.106 (1)
Descrição: Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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