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Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. I. Experimental results

Romaka, V.A. ; Stadnyk, Yu ; Romaka, L. ; Horyn, А. ; Pashkevich, V. ; Nychyporuk, H. ; Garanyuk, P.

Fìzika ì hìmìâ tverdogo tìla (Online), 2022-04, Vol.23 (2), p.235-241 [Periódico revisado por pares]

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Título:
Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. I. Experimental results
Autor: Romaka, V.A. ; Stadnyk, Yu ; Romaka, L. ; Horyn, А. ; Pashkevich, V. ; Nychyporuk, H. ; Garanyuk, P.
Assuntos: electrical conductivity ; fermi level ; semiconductor ; thermopower coefficient
É parte de: Fìzika ì hìmìâ tverdogo tìla (Online), 2022-04, Vol.23 (2), p.235-241
Descrição: The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu1-xZrxNiSb was studied in the ranges: T = 80–400 K, x = 0–0.10. From experimental studies it has been established that doping of p-LuNiSb compound with Zr atoms simultaneously generates both structural defects of acceptor and donor nature, the concentration of which increases with increasing content of Zr atoms. It was shown that the investigated semiconductor solid solution Lu1-xZrxNiSb is a promising thermoelectric material.
Editor: Vasyl Stefanyk Precarpathian National University
Idioma: Inglês

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