Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Xu, M ; Cheng, Y. Q ; Wang, L ; Sheng, H. W ; Meng, Y ; Yang, W. G ; Han, X. D ; Ma, E

Proc. Natl. Acad. Sci. USA, 2012-05, Vol.109 (18), p.E1055-E1062 [Periódico revisado por pares]

United States: National Academy of Sciences

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