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Epitaxial growth of high mobility Bi2Se3 thin films on CdS

Kou, X. F. ; He, L. ; Xiu, F. X. ; Lang, M. R. ; Liao, Z. M. ; Wang, Y. ; Fedorov, A. V. ; Yu, X. X. ; Tang, J. S. ; Huang, G. ; Jiang, X. W. ; Zhu, J. F. ; Zou, J. ; Wang, K. L.

Applied physics letters, 2011-06, Vol.98 (24) [Periódico revisado por pares]

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Título:
Epitaxial growth of high mobility Bi2Se3 thin films on CdS
Autor: Kou, X. F. ; He, L. ; Xiu, F. X. ; Lang, M. R. ; Liao, Z. M. ; Wang, Y. ; Fedorov, A. V. ; Yu, X. X. ; Tang, J. S. ; Huang, G. ; Jiang, X. W. ; Zhu, J. F. ; Zou, J. ; Wang, K. L.
É parte de: Applied physics letters, 2011-06, Vol.98 (24)
Descrição: We report the experiment of high quality epitaxial growth of Bi2Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm2/V s for the as-grown Bi2Se3 thin films at temperatures below 30 K. These characteristics of Bi2Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.
Idioma: Inglês

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