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Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field

Guimarães, M H D ; Zomer, P J ; Ingla-Aynés, J ; Brant, J C ; Tombros, N ; van Wees, B J

Physical review letters, 2014-08, Vol.113 (8), p.086602-086602, Article 086602 [Periódico revisado por pares]

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Título:
Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
Autor: Guimarães, M H D ; Zomer, P J ; Ingla-Aynés, J ; Brant, J C ; Tombros, N ; van Wees, B J
Assuntos: Asymptotic properties ; Electric fields ; Electronics ; Encapsulation ; Graphene ; Relaxation time ; Transport ; Tuning
É parte de: Physical review letters, 2014-08, Vol.113 (8), p.086602-086602, Article 086602
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Descrição: We experimentally study the electronic spin transport in hexagonal BN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 μm even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is τ(⊥)/τ(||) ≈ 0.75 for zero applied perpendicular electric field. By tuning the electric field, this anisotropy changes to ≈ 0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.
Editor: United States
Idioma: Inglês

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