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Study and Simulation of Junctionless Double gate Transistor using CAD Tools

E N, ganesh

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Título:
Study and Simulation of Junctionless Double gate Transistor using CAD Tools
Autor: E N, ganesh
Assuntos: Electrical and Electronic Engineering not elsewhere classified ; FOS: Electrical engineering, electronic engineering, information engineering
Descrição: In this work, a TCAD-based investigation of Gaussian-doped double-gate junctionless (GD-DG-JL) transistors for reliability evaluation and high-frequency applications was presented. Leakage current was investigated to evaluate device reliability against variations of various parameters. The location of the peak doping concentration along the channel, the work function of the metal source/drain contacts, and the spread of the Gaussian profile have been modified to optimize the device performance for RF applications. Higher Gaussian doping tail values give better cutoff frequencies. The performance of Gaussian-doped DG-JL transistors was also compared with comparable uniformly doped DG-JL transistors. Compared to uniformly doped transistors, Gaussian doped DG-JL transistors exhibit superior cut-off frequency, improved reliability with respect to lower electron temperature in the device, and reduced S/D work function change. is better in that it has less.
Editor: figshare
Data de criação/publicação: 2022
Idioma: Inglês

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