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Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

Reznik, R. R. ; Kotlyar, K. P. ; Il’kiv, I. V. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Osipov, A. V. ; Nikitina, E. V. ; Cirlin, G. E.

Physics of the solid state, 2016-10, Vol.58 (10), p.1952-1955 [Periódico revisado por pares]

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Título:
Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy
Autor: Reznik, R. R. ; Kotlyar, K. P. ; Il’kiv, I. V. ; Soshnikov, I. P. ; Kukushkin, S. A. ; Osipov, A. V. ; Nikitina, E. V. ; Cirlin, G. E.
Assuntos: Analysis ; Buffer layers ; Epitaxial growth ; Epitaxy ; Gallium nitrate ; Gallium nitrides ; Liquor ; Molecular beam epitaxy ; Nanocrystals ; Nitrides ; Optical properties ; Photoluminescence ; Physics ; Physics and Astronomy ; Semiconductors ; Silicon ; Silicon carbide ; Silicon carbides ; Silicon substrates ; Solid State Physics
É parte de: Physics of the solid state, 2016-10, Vol.58 (10), p.1952-1955
Descrição: The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.
Editor: Moscow: Pleiades Publishing
Idioma: Inglês

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