Idioma:

Photoluminescence and Raman studies of GaN films grown by MOCVD

Tung, Luong Tien ; Lin, K L ; Chang, E Y ; Huang, W C ; Hsiao, Y L ; Chiang, C H

Journal of physics. Conference series, 2009-09, Vol.187 (1), p.012021 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por

Título:
Photoluminescence and Raman studies of GaN films grown by MOCVD
Autor: Tung, Luong Tien ; Lin, K L ; Chang, E Y ; Huang, W C ; Hsiao, Y L ; Chiang, C H
Assuntos: Epitaxial growth ; Excitation ; Excitons ; Photoluminescence ; Physics ; Raman spectra ; Residual stress ; Sapphire ; Silicon substrates
É parte de: Journal of physics. Conference series, 2009-09, Vol.187 (1), p.012021
Descrição: The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power of GaN film grown on c-plane sapphire by using MOCVD shows clearly free-exciton A, B and exciton A bound to neutral donors (D°X) at 3.502 eV, 3.509 eV, and 3.496 eV, respectively. The full width at half maximum (FWHM) and binding energy of exciton A of the high quality GaN film were evaluated as small as 3.7 meV and 27.9 ± 0.5 meV, respectively. In addition, PL and Raman scattering of GaN films grown on r-plane sapphire and (111) Si substrates by using MOCVD were examined. The residual stress effect was detected in all films.
Editor: Bristol: IOP Publishing
Idioma: Inglês

Links

Voltar para lista de resultados