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On quantum-dot lasing at gain peak with linewidth enhancement factor αH = 0

Chow, Weng W. ; Zhang, Zeyu ; Norman, Justin C. ; Liu, Songtao ; Bowers, John E.

APL photonics, 2020-02, Vol.5 (2), p.26101 [Periódico revisado por pares]

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Título:
On quantum-dot lasing at gain peak with linewidth enhancement factor αH = 0
Autor: Chow, Weng W. ; Zhang, Zeyu ; Norman, Justin C. ; Liu, Songtao ; Bowers, John E.
Assuntos: ENGINEERING
É parte de: APL photonics, 2020-02, Vol.5 (2), p.26101
Notas: AC04-94AL85000; AR000067; NA0003525; 214971
USDOE Office of Science (SC)
US Army Space and Missile Defense Command (USASMDC)
SAND-2020-1617J
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Directed Energy Joint Transition Office (DE-JTO)
Descrição: This paper describes an investigation of the linewidth enhancement factor αH in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing αH. In particular, the feasibility of lasing at the gain peak with αH = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.
Editor: United States: American Institute of Physics (AIP)
Idioma: Inglês

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