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0.18 mu m CMOS dual-band low-noise amplifier for ZigBee development

Xuan, K ; Tsang, K F ; Lee, W C ; Lee, S C

Electronics letters, 2010-01, Vol.46 (1), p.1-1 [Periódico revisado por pares]

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Título:
0.18 mu m CMOS dual-band low-noise amplifier for ZigBee development
Autor: Xuan, K ; Tsang, K F ; Lee, W C ; Lee, S C
Assuntos: Amplifiers ; Bands ; CMOS ; Gain ; Noise levels ; Tanks ; Tuning ; Voltage
É parte de: Electronics letters, 2010-01, Vol.46 (1), p.1-1
Notas: ObjectType-Article-1
SourceType-Scholarly Journals-1
content type line 23
ObjectType-Feature-2
Descrição: A fully integrated dual-band (868/915 MHz and 2.4 GHz) low-noise amplifier is designed, using 0.18 mu m RFCMOS technology for ZigBee development. In both bands, achieved gains are better than 15 dB and the resulting noise figures are better than 2.0 dB. The input and the output reflections are measured to be better than 210 dB in both bands. By tuning varactors in input and output LC tanks, frequency drifts due to unexpected parasitics and process variations are easily compensated. The amplifier works at 1.2 V supply voltage with 10 mA current dissipation.
Idioma: Inglês

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