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Adsorption and condensation of bismuth on tungsten

Radoń, T. ; Sidorski, Z.

Journal of crystal growth, 1979-01, Vol.47 (1), p.115-120 [Periódico revisado por pares]

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Título:
Adsorption and condensation of bismuth on tungsten
Autor: Radoń, T. ; Sidorski, Z.
É parte de: Journal of crystal growth, 1979-01, Vol.47 (1), p.115-120
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: The bismuth-tungsten system was studied by means of field emission microscopy. The average work function changes induced by the bismuth adsorption were measured for different amounts of adsorbed bismuth. It was found that the adsorption of bismuth changes the work function of tungsten only slightly. The penetration of bismuth into the tungsten substrate was observed. The growth of bismuth single crystals was studied when bismuth was deposited with a rate of about 6 monolayers per minute onto the tungsten substrate and kept at 470 K. Bismuth single crystals with two-fold symmetry occurred most often on the (100) tungsten planes. On the (111) tungsten plane bismuth crystals with three-fold symmetry were observed. An explanation of the observed phenomena is proposed.
Editor: Elsevier B.V
Idioma: Inglês

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