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Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature

Leite, E. R ; Pontes, F. M ; Paris, E. C ; Paskocimas, C. A ; Lee, E. J. H ; Longo, E ; Pizani, P. S ; Varela, J. A ; Mastelaro, V

Advanced materials for optics and electronics, 2000-11, Vol.10 (6), p.235-240 [Periódico revisado por pares]

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Título:
Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature
Autor: Leite, E. R ; Pontes, F. M ; Paris, E. C ; Paskocimas, C. A ; Lee, E. J. H ; Longo, E ; Pizani, P. S ; Varela, J. A ; Mastelaro, V
Assuntos: amorphous materials ; luminescence ; materials science ; semiconductors ; sol-gel process
É parte de: Advanced materials for optics and electronics, 2000-11, Vol.10 (6), p.235-240
Notas: ark:/67375/WNG-HG3B50RH-G
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istex:48C8865D2CE29F9FEC383291573459F5D3A770EF
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ArticleID:AMO409
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: This paper describes a new amorphous wide‐band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol–gel‐like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.
Editor: Chichester, UK: John Wiley & Sons, Ltd
Idioma: Inglês

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