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Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

SANTUCCI, S ; LOZZI, L ; PASSACANTANDO, M ; PHANI, A. R ; PALUMBO, E ; BRACCHITTA, G ; DE TOMMASIS, R ; TORSI, A ; ALFONSETTI, R ; MOCCIA, G

Journal of non-crystalline solids, 1999-04, Vol.245 (1-3), p.224-231 [Periódico revisado por pares]

Amsterdam: Elsevier

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Título:
Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2
Autor: SANTUCCI, S ; LOZZI, L ; PASSACANTANDO, M ; PHANI, A. R ; PALUMBO, E ; BRACCHITTA, G ; DE TOMMASIS, R ; TORSI, A ; ALFONSETTI, R ; MOCCIA, G
Assuntos: Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
É parte de: Journal of non-crystalline solids, 1999-04, Vol.245 (1-3), p.224-231
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Dielectric films of ONO structure have been grown over a polycrystalline Si-P doped substrate. Films with a total thickness of about 30 nm are obtained by two different deposition techniques for the top oxide layer. The bottom oxide and nitride layers were obtained by thermal oxidation and low pressure CVD, resp. Chemical composition was measured by XPS Auger parameter technique, while the thickness of the deposited layers was determined by the X-ray reflectivity method and compared with the measurements performed on TEM cross section images. The influence of the layer composition and thickness on the electrical properties of the whole film has been studied by measuring current as a function of voltage to study the mechanisms that contribute to an increase of the leakage current with increasing applied voltage. 18 refs.
Editor: Amsterdam: Elsevier
Idioma: Inglês

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Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

SANTUCCI, S ; LOZZI, L ; PASSACANTANDO, M ; PHANI, A. R ; PALUMBO, E ; BRACCHITTA, G ; DE TOMMASIS, R ; TORSI, A ; ALFONSETTI, R ; MOCCIA, G

Amsterdam: Elsevier

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