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Driven electron g-factor anisotropy in layered III–V semiconductors interfacing, tunnel coupling, and structure inversion asymmetry effects

Marcelo Alejandro Toloza Sandoval Jhon Elber Leon Padilla; Adilson Barros Wanderley; Guilherme Matos Sipahi; José Fernando Diniz Chubaci; Antonio Ferreira da Silva

Journal of Applied Physics Melville v. 135, n. 10, p. 103901-1-103901-9, Mar. 2024

Melville 2024

Localização: IFSC - Inst. Física de São Carlos    (PROD035666 )(Acessar)

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