0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal
Tanabe, M. ; Matsuno, T. ; Kashiwagi, N. ; Sakai, H. ; Inoue, K. ; Tamura, A.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996-09, Vol.14 (5), p.3248-3251Sem texto completo
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