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0.013 mm super(2) and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Nguyen, Nga TH ; Ukaegbu, Ikechi Augustine ; Sangirov, Jamshid ; Cho, Mu Hee ; Lee, Tae Woo ; Park, Hyo Hoon

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487 [Periódico revisado por pares]

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Título:
0.013 mm super(2) and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects
Autor: Nguyen, Nga TH ; Ukaegbu, Ikechi Augustine ; Sangirov, Jamshid ; Cho, Mu Hee ; Lee, Tae Woo ; Park, Hyo Hoon
Assuntos: Amplifiers ; CMOS ; Direct current ; Gain ; Microwaves ; Optical interconnects ; Power consumption ; Reproduction
É parte de: Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
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ObjectType-Feature-1
Descrição: A transimpedance amplifier (TIA) has been designed and implemented for short-reach optical interconnect applications. The TIA, which is based on the regulated cascode technique, is implemented with a bandwidth enhancement technique, where capacitive degeneration and resistive feedback has been exploited in a 0.13 mu m CMOS technology, while maintaining a small chip area and low power consumption. The TIA showed a measured transimpedance gain of 51dB Omega and works up to 10 Gb/s in the presence of 0.3 pF input photodiode capacitance. It occupies an active area of 0.013 mm super(2) with a power dissipation of 4.3 mW. The proposed TIA achieved high gain-bandwidth product per DC power (GBP/DC) figure of merit of 589 GHz Omega /mW with an input referred noise of 20 pA/[radic]Hz. [copy 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2484-2487, 2013
Idioma: Inglês

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