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Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices

Sakuraba, Y. ; Ueda, M. ; Miura, Y. ; Sato, K. ; Bosu, S. ; Saito, K. ; Shirai, M. ; Konno, T. J. ; Takanashi, K.

Applied physics letters, 2012-12, Vol.101 (25) [Periódico revisado por pares]

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Título:
Extensive study of giant magnetoresistance properties in half-metallic Co2(Fe,Mn)Si-based devices
Autor: Sakuraba, Y. ; Ueda, M. ; Miura, Y. ; Sato, K. ; Bosu, S. ; Saito, K. ; Shirai, M. ; Konno, T. J. ; Takanashi, K.
Assuntos: Devices ; Disk drives ; Epitaxy ; Giant magnetoresistance ; Iron ; Magnetoresistance ; Magnetoresistivity ; Manganese
É parte de: Applied physics letters, 2012-12, Vol.101 (25)
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Fully epitaxial Co2FexMn1−xSi(CFMS)/Ag/Co2FexMn1−xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS layer thicknesses tCFMS were prepared. The highest magnetoresistance (MR) ratios, 58% at room temperature and 184% at 30 K, were observed in the sample with x = 0.4 and tCFMS = 3 nm. Enhancement of interface spin-asymmetry was suggested for x = 0.4 compared with that at x = 0. A MR ratio of 58% was also observed even in a very thin trilayer structure, CFMS(4 nm)/Ag(3 nm)/CFMS(2 nm), which is promising for a next-generation magnetic read sensor for high-density hard disk drives.
Idioma: Inglês

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