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Raman diagnostics of free charge carriers in boron‐doped silicon nanowires

Rodichkina, S.P. ; Nychyporuk, T. ; Pavlikov, A.V. ; Lysenko, V. ; Timoshenko, V.Yu

Journal of Raman spectroscopy, 2019-11, Vol.50 (11), p.1642-1648 [Periódico revisado por pares]

Bognor Regis: Wiley Subscription Services, Inc

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Título:
Raman diagnostics of free charge carriers in boron‐doped silicon nanowires
Autor: Rodichkina, S.P. ; Nychyporuk, T. ; Pavlikov, A.V. ; Lysenko, V. ; Timoshenko, V.Yu
Assuntos: Boron ; Carrier density ; charge carriers ; Charge density ; Chemical etching ; Condensed Matter ; Current carriers ; Doping ; doping profile ; Engineering Sciences ; Etching ; fano resonance ; Mapping ; Materials ; Materials Science ; Micro and nanotechnologies ; Microelectronics ; micro‐raman spectroscopy ; Nanotechnology ; Nanowires ; Organic chemistry ; Photonics ; Physics ; Raman spectra ; Raman spectroscopy ; Silicon ; silicon nanowires ; Spectroscopy ; Spectrum analysis
É parte de: Journal of Raman spectroscopy, 2019-11, Vol.50 (11), p.1642-1648
Descrição: Raman spectroscopy is used to probe free charge carriers in layers of silicon nanowires (SiNWs) formed by metal‐assisted chemical etching of crystalline silicon (c‐Si) wafers followed by additional doping with boron. One‐phonon Raman spectra of the boron‐doped SiNWs are strongly modified due to the Fano effect that allowed us to determine the free carrier concentration in the nanowires in the range from 1019 to 1020 cm−3, depending on the doping conditions. The micro‐Raman mapping was used to determine the depth profile of charge carrier density along nanowires, which decreases toward the SiNWs/c‐Si interface. The obtained results are discussed in view of possible applications of the Raman spectroscopy for express‐diagnostics of doped Si nanostructures for photonics and thermoelectric applications. Determination of the free hole concentration in boron‐doped silicon nanowires by Raman spectroscopy.
Editor: Bognor Regis: Wiley Subscription Services, Inc
Idioma: Inglês

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Raman diagnostics of free charge carriers in boron‐doped silicon nanowires

Rodichkina, S.P. ; Nychyporuk, T. ; Pavlikov, A.V. ; Lysenko, V. ; Timoshenko, V.Yu

Bognor Regis: Wiley Subscription Services, Inc

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