Idioma:

A 0.0487mm2 4Kx8 Metal-Gate Innovative Fuse Memory at 22nm FD-SOI with 1.2V+/-16% Program Voltage, 0.42V Vddmin, and Full Testability

Chung, Shine ; Lin, Jay ; Fang, Wen-Kuan ; Yu, Wen-Hua ; Wendt, Michael ; Prengel, Helmut ; Xu, Anmin ; Lee, Heng Kah

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018, p.1-2

Sem texto completo

Citações Citado por

Título:
A 0.0487mm2 4Kx8 Metal-Gate Innovative Fuse Memory at 22nm FD-SOI with 1.2V+/-16% Program Voltage, 0.42V Vddmin, and Full Testability
Autor: Chung, Shine ; Lin, Jay ; Fang, Wen-Kuan ; Yu, Wen-Hua ; Wendt, Michael ; Prengel, Helmut ; Xu, Anmin ; Lee, Heng Kah
Assuntos: Computer architecture ; Data security ; Electromigration ; Fuses ; Microprocessors ; Programming ; Sensitivity
É parte de: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2018, p.1-2
Descrição: A 4Kx8 metal-gate Innovative Fuse (I-fuse) macro at 22nm FD-SOI is based on programming below thermal run away and above electromigration (EM) thresholds. The fuse macro has a 0.744um2 cell and a 0.0487mm2 macro size. This OTP can be programmed within 1.00-1.45V and read at 0.42V minimum voltage at 1Mhz, with + /-100 ohm read sensitivity. This OTP macro offers full testability in (a) I-fuse cell programmability by screening initial fuse resistance, ( \mathrm {b}) \sim 100% program yield by characterizing program window, and (c) peripheral circuits by creating fake reading 1 to generate SRAM-like test patterns, respectively.
Editor: IEEE
Idioma: Inglês

Voltar para lista de resultados