The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs

Caymax, Matty ; Leys, Frederik ; Mitard, Jéro^me ; Martens, Koen ; Yang, Lijun ; Pourtois, Geoffrey ; Vandervorst, Wilfried ; Meuris, Marc ; Loo, Roger

Journal of the Electrochemical Society, 2009, Vol.156 (12), p.H979 [Periódico revisado por pares]

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