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Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx

Vohra, Anurag ; Makkonen, Ilja ; Pourtois, Geoffrey ; Slotte, Jonatan ; Porret, Clement ; Rosseel, Erik ; Khanam, Afrina ; Tirrito, Matteo ; Douhard, Bastien ; Loo, Roger ; Vandervorst, Wilfried

ECS journal of solid state science and technology, 2020-05, Vol.9 (4) [Periódico revisado por pares]

IOP Publishing

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  • Título:
    Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1−xSnx and SiyGe1−x−ySnx
  • Autor: Vohra, Anurag ; Makkonen, Ilja ; Pourtois, Geoffrey ; Slotte, Jonatan ; Porret, Clement ; Rosseel, Erik ; Khanam, Afrina ; Tirrito, Matteo ; Douhard, Bastien ; Loo, Roger ; Vandervorst, Wilfried
  • Assuntos: Chemical Vapor Deposition ; Density Functional Theory ; GeSn ; Positron Annihilation ; Source/ Drain ; Vacancy
  • É parte de: ECS journal of solid state science and technology, 2020-05, Vol.9 (4)
  • Notas: JSS-100126.R1
  • Descrição: This paper benchmarks various epitaxial growth schemes based on n-type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 × 1020 cm−3 and a contact resistivity down to 7.5 × 10−9 .cm2. However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within the material stacks assessed, one option for Ge nMOS source/drain stressors would be to stack Si:P, deposited at contact level, on top of a selectively grown n-SiyGe1−x−ySnx at source/drain level, in line with the concept of Si passivation of n-Ge surfaces to achieve low contact resistivities as reported in literature (Martens et al. 2011 Appl. Phys. Lett., 98, 013 504). The saturation in active carrier concentration with increasing P (or As)-doping is the major bottleneck in achieving low contact resistivities for as-grown Ge or SiyGe1−x−ySnx. We focus on understanding various dopant deactivation mechanisms in P-doped Ge and Ge1−xSnx alloys. First principles simulation results suggest that P deactivation in Ge and Ge1−xSnx can be explained both by P-clustering and donor-vacancy complexes. Positron annihilation spectroscopy analysis, suggests that dopant deactivation in P-doped Ge and Ge1−xSnx is primarily due to the formation of Pn-V and SnmPn-V clusters.
  • Editor: IOP Publishing
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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