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Transport Mechanisms in Polarized Semiconductor Photocathodes

Ioakeimidi, K ; Brachmann, A ; Clendenin, J E ; Garwin, E L ; Kirby, R E ; Maruyama, T ; Prescott, C Y ; Prepost, R ; Mulhollan, G A ; Bierman, J C ; Gradinaru, S A

Proceedings of the 17th International Spin Physics Symposium (AIP Conference Proceedings Volume 915), 2007, Vol.915, p.1061-1066 [Periódico revisado por pares]

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  • Título:
    Transport Mechanisms in Polarized Semiconductor Photocathodes
  • Autor: Ioakeimidi, K ; Brachmann, A ; Clendenin, J E ; Garwin, E L ; Kirby, R E ; Maruyama, T ; Prescott, C Y ; Prepost, R ; Mulhollan, G A ; Bierman, J C ; Gradinaru, S A
  • É parte de: Proceedings of the 17th International Spin Physics Symposium (AIP Conference Proceedings Volume 915), 2007, Vol.915, p.1061-1066
  • Notas: SourceType-Scholarly Journals-2
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    ObjectType-Conference Paper-1
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    SourceType-Conference Papers & Proceedings-1
    ObjectType-Article-3
  • Descrição: R. Prepost Department of Physics, University of Wisconsin, Wisconsin 53706 G. A. Mulhollan and J. C. Bierman Saxet Surface Science, Austin, Texas, 78744 S. A. Gradinaru Magma Design, Santa Clara, CA We investigated the effect of an accelerating field on the spin polarization of photo-generated electrons in a 100nm thick GaAs based photocathode active region. By decreasing the transport time of the electrons and the number of scattering events that cause depolarization, we expected to increase the polarization as was indicated by Monte Carlo simulations of the scattering and transport time statistics of the electrons.A tungsten (W) grid was deposited on the cathode surface to provide a uniform voltage distribution across the cathode surface. The metal grid formed a Schottky contact with the semiconductor surface. The bias voltage was primarily dropped at the metal semiconductor interface region, which is the cathode active region. For positive surface bias, the accelerating voltage not only increased the polarization, but it also enhanced the quantum efficiency of the photocathode. Preliminary results verify the bias effect on both quantum efficiency and polarization by a factor of 1.8 and 1% respectively.
  • Idioma: Inglês

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