Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems

J R L Fernandez C Moyses Araujo; A Ferreira da Silva; J. R Leite (José Roberto); Bo E Sernelius; A Tabata; E Abramog; V A Chitta; C Persson; R Ahuja; I Pepe; D J As; T Frey; D Schikora; K Lischka

Journal of Crystal Growth Amsterdam v. 231, n. 3, p. 420-427, 2001

Amsterdam 2001

Acesso online