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0.1-MU M-GATE METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ON GaAs AND ITS APPLICATION TO SOURCE-COUPLED FIELD-EFFECT TRANSISTOR LOGIC

Ohshima, T ; Moriguchi, H ; Hoshi, S ; Itoh, M ; Tsunotani, M ; Ichioka, T

Japanese Journal of Applied Physics, Part 1, 2003, Vol.42 (6A), p.3320-3323 [Peer Reviewed Journal]

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