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Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Adelmann, C. ; Brault, J. ; Jalabert, D. ; Gentile, P. ; Mariette, H. ; Mula, Guido ; Daudin, B.

Journal of applied physics, 2002-06, Vol.91 (12), p.9638-9645 [Periódico revisado por pares]

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Título:
Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN
Autor: Adelmann, C. ; Brault, J. ; Jalabert, D. ; Gentile, P. ; Mariette, H. ; Mula, Guido ; Daudin, B.
Assuntos: Condensed Matter ; Electric power ; Engineering Sciences ; Materials ; Materials Science ; Micro and nanotechnologies ; Microelectronics ; Physics
É parte de: Journal of applied physics, 2002-06, Vol.91 (12), p.9638-9645
Descrição: The Ga surface coverage during the growth of GaN by plasma-assisted molecular-beam epitaxy (PAMBE) has been systematically studied by reflection high-energy electron diffraction as a function of the Ga flux and the substrate temperature. As a consequence, a diagram is depicted, which describes the Ga surface coverage during PAMBE as function of growth conditions. In particular, we show that a region exists in this diagram, in which the Ga surface coverage is independent of fluctuations in the Ga flux or the substrate temperature and which forms a “growth window” for GaN growth. The influence of the Ga surface coverage on the GaN surface morphology and the growth kinetics is discussed.
Editor: American Institute of Physics
Idioma: Inglês;Polonês

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