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InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Xie, H ; Fischer, A M ; Ponce, F A

Journal of applied physics, 2014-09, Vol.116 (9) [Periódico revisado por pares]

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Título:
InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells
Autor: Xie, H ; Fischer, A M ; Ponce, F A
Assuntos: Aluminum ; Applied physics ; Composition ; Crystal defects ; Epitaxial growth ; Metalorganic chemical vapor deposition ; Multilayers ; Optimization ; Photovoltaic cells ; Quantum dots ; Solar cells
É parte de: Journal of applied physics, 2014-09, Vol.116 (9)
Descrição: InAs quantum dot multilayers have been grown using AlxGa1−xAs spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.
Editor: Melville: American Institute of Physics
Idioma: Inglês

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