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Changes in effective work function of HfxRu1-x alloy gate electrode

NABATAME, T ; NUNOSHIGE, Y ; KADOSHIMA, M ; TAKABA, H ; SEGAWA, K ; KIMURA, S ; SATAKE, H ; OTA, H ; OHISHI, T ; TORIUMI, A

Microelectronic engineering, 2008-07, Vol.85 (7), p.1524-1528 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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Título:
Changes in effective work function of HfxRu1-x alloy gate electrode
Autor: NABATAME, T ; NUNOSHIGE, Y ; KADOSHIMA, M ; TAKABA, H ; SEGAWA, K ; KIMURA, S ; SATAKE, H ; OTA, H ; OHISHI, T ; TORIUMI, A
Assuntos: Applied sciences ; Dielectric, amorphous and glass solid devices ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
É parte de: Microelectronic engineering, 2008-07, Vol.85 (7), p.1524-1528
Notas: ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
Descrição: Effective work function (m,eff) values of Hfx Ru1-x alloy gate electrodes on SiO2 metal-oxide-semiconductor (MOS) capacitors were carefully examined to assess whether the m,eff was determined by the crystalline structure or the composition of the HfxRu1-x alloy. X-ray diffraction results indicated that the crystalline structures of HfxRu1-x alloy were divided into hexagonal-Ru, cubic-HfRu or hexagonal-Hf with the increase of Hf content. The m,eff values could be controlled continuously from 4.6 to 4.0 eV by changing the Hf content. The experimental m,eff value showed a good agreement with theoretical results considering the compositional ratio of pure Hf and Ru. These results suggest that the m,eff of HfxRu1-x alloy gates on SiO2 MOS capacitors is dominantly determined by the HfxRu1-x composition rather than the crystalline structure.
Editor: Amsterdam: Elsevier Science
Idioma: Inglês

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Changes in effective work function of HfxRu1-x alloy gate electrode

NABATAME, T ; NUNOSHIGE, Y ; KADOSHIMA, M ; TAKABA, H ; SEGAWA, K ; KIMURA, S ; SATAKE, H ; OTA, H ; OHISHI, T ; TORIUMI, A

Amsterdam: Elsevier Science

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