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Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

Neophytou, Neophytos ; Zianni, Xanthippi ; Kosina, Hans ; Frabboni, Stefano ; Lorenzi, Bruno ; Narducci, Dario

Nanotechnology, 2013-05, Vol.24 (20), p.205402-205402 [Periódico revisado por pares]

Bristol: IOP Publishing

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Título:
Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si
Autor: Neophytou, Neophytos ; Zianni, Xanthippi ; Kosina, Hans ; Frabboni, Stefano ; Lorenzi, Bruno ; Narducci, Dario
Assuntos: Coefficients ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electrical conductivity ; Electrical resistivity ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in multilayers, nanoscale materials and structures ; Exact sciences and technology ; Lattice dynamics ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Nanocrystals ; Nanostructure ; Phonons in low-dimensional structures and small particles ; Physics ; Power factor ; Resistivity ; Silicon ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thermal properties of condensed matter ; Thermal properties of small particles, nanocrystals, nanotubes
É parte de: Nanotechnology, 2013-05, Vol.24 (20), p.205402-205402
Notas: ObjectType-Article-1
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Descrição: A large thermoelectric power factor in heavily boron-doped p-type nanograined Si with grain sizes ∼30 nm and grain boundary regions of ∼2 nm is reported. The reported power factor is ∼5 times higher than in bulk Si. It originates from the surprising observation that for a specific range of carrier concentrations, the electrical conductivity and Seebeck coefficient increase simultaneously. The two essential ingredients for this observation are nanocrystallinity and extremely high boron doping levels. This experimental finding is interpreted within a theoretical model that considers both electron and phonon transport within the semiclassical Boltzmann approach. It is shown that transport takes place through two phases so that high conductivity is achieved in the grains, and high Seebeck coefficient by the grain boundaries. This together with the drastic reduction in the thermal conductivity due to boundary scattering could lead to a significant increase of the figure of merit ZT. This is one of the rare observations of a simultaneous increase in the electrical conductivity and Seebeck coefficient, resulting in enhanced thermoelectric power factor.
Editor: Bristol: IOP Publishing
Idioma: Inglês

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Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

Neophytou, Neophytos ; Zianni, Xanthippi ; Kosina, Hans ; Frabboni, Stefano ; Lorenzi, Bruno ; Narducci, Dario

Bristol: IOP Publishing

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