A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Mao, Wei ; She, Wei-Bo ; Yang, Cui ; Zhang, Chao ; Zhang, Jin-Cheng ; Ma, Xiao-Hua ; Zhang, Jin-Feng ; Liu, Hong-Xia ; Yang, Lin-An ; Zhang, Kai ; Zhao, Sheng-Lei ; Chen, Yong-He ; Zheng, Xue-Feng ; Hao, Yue

Chinese physics B, 2014-08, Vol.23 (8), p.487-494 [Periódico revisado por pares]

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