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Mobility overestimation due to gated contacts in organic field-effect transistors

Bittle, Emily G ; Basham, James I ; Jackson, Thomas N ; Jurchescu, Oana D ; Gundlach, David J

Nature communications, 2016-03, Vol.7 (1), p.10908-10908, Article 10908 [Periódico revisado por pares]

England: Nature Publishing Group

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  • Título:
    Mobility overestimation due to gated contacts in organic field-effect transistors
  • Autor: Bittle, Emily G ; Basham, James I ; Jackson, Thomas N ; Jurchescu, Oana D ; Gundlach, David J
  • Assuntos: Dielectric Spectroscopy ; Materials Testing ; Naphthacenes - chemistry ; Silicon Dioxide - chemistry ; Transistors, Electronic
  • É parte de: Nature communications, 2016-03, Vol.7 (1), p.10908-10908, Article 10908
  • Notas: ObjectType-Article-1
    SourceType-Scholarly Journals-1
    ObjectType-Feature-2
    content type line 23
  • Descrição: Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.
  • Editor: England: Nature Publishing Group
  • Idioma: Inglês
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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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